HK UPPERBOND INDUSTRIAL LIMITED
HK UPPERBOND INDUSTRIAL LIMITED
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A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.
Absolute Maximum Ratings
| Parameter | Max. | Units | |
| Id @ Tq = 25°C | Continuous Drain Current, Vgs @ 10V | 49 | A |
| lD @ Tc = 100°C | Continuous Drain Current, Vgs @ 10V | 35 | |
| Idm | Pulsed Drain Current ① | 160 | |
| PD @Ta = 25°C | Power Dissipation | 3.8 | W |
| PD @TC = 25°C | Power Dissipation | 94 | W |
| Linear Derating Factor | 0.63 | W/°C | |
| Vgs | Gate-to-Source Voltage | ±20 | V |
| Iar | Avalanche Current① | 25 | A |
| Ear | Repetitive Avalanche Energy® | 9.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt ③ | 5.0 | V/ns |
| Tj | Operating Junction and | -55 to + 175 | °C |
Material
Most transistors are made from very pure silicon, and some from germanium, but certain other semiconductor materials are sometimes used. A transistor may have only one kind of charge carrier, in a field-effect transistor, or may have two kinds of charge carriers in bipolar junction transistor devices.
Point-Contact Transistor
In 1948, the point-contact transistor was independently invented by German physicists Herbert Mataré and Heinrich Welker while working at the Compagnie des Freins et Signaux Westinghouse, a Westinghouse subsidiary located in Paris. Mataré had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II. Using this knowledge, he began researching the phenomenon of "interference" in 1947.
